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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5287
DESCRIPTION With TO-3PN package High voltage,high speed switching APPLICATIONS For switching regulator and general purpose applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION
Absolute maximum ratings(Ta=ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER
TOR NDU ICO E SEM ANG INCH
CONDITIONS VALUE 900 Collector-base voltage Open emitter Collector-emitter voltage Open base 550 7 Emitter-base voltage Open collector Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25ae 5 10 2.5 80 150 -55~150
UNIT V V V A A A W ae ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN
2SC5287
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;IB=0
550
V
VCEsat
Collector-emitter saturation voltage
IC=1.8A; IB=0.36A
0.5
V
VBEsat
Base-emitter saturation voltage
IC=1.8A; IB=0.36A
1.2
V
ICBO
Collector cut-off current
VCB=800V; IE=0
100
|I
A
IEBO
Emitter cut-off current
VEB=7V; IC=0
100
|I
A
hFE
DC current gain
IC=1.8A ; VCE=4V
10
25
COB
fT
Switching times
ton
ts
TOR NDU ICO E SEM ANG INCH
Transition frequency IE=-0.35A ; VCE=12V 6 Turn-on time Storage time IC=1.8A; RL=139| IB1=0.27A; IB2=-0.9A VCC=250V Fall time
Output capacitance
IE=0 ; VCB=10V;f=1MHz
50
pF
MHz
0.7
|I
s
4.0
|I
s
tf
0.5
|I
s
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5287
TOR NDU ICO E SEM ANG INCH
Fig.2 outline dimensions (unindicated tolerance:A 0.1mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5287
TOR NDU ICO E SEM ANG INCH
4


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